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Investigation on the antiferromagnetic component in the intrinsic exchange bias in structurally single phase Cr2Te3 thin film
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Citations
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References
2012
Year
EngineeringMagnetic ResonanceMagnetoresistanceMagnetismFerroelectric ApplicationAntiferromagnetic ComponentMolecular Beam EpitaxyEpitaxial GrowthMaterials SciencePhysicsHysteresis Loop ShiftQuantum MagnetismTransition Metal ChalcogenidesSpintronicsIntrinsic Exchange BiasNatural SciencesAfm ComponentCondensed Matter PhysicsApplied PhysicsThin Films
We report the intrinsic exchange bias in structurally single phase Cr2Te3 thin film grown by low temperature molecular beam epitaxy. The hysteresis loop shift is confirmed due to the ferromagnet/antiferromagnet coupling rather than surface spin disorder effect or minor loop effect. The AFM component attributing to the exchange bias stems from the vacancy Cr layer in Cr2Te3 and is of two dimensions. The magnetic properties of the AFM component are investigated by studying the temperature dependence and the measure field dependence of coercivity and hysteresis loop shift. The blocking temperature is determined to be about 110 K. It is found that the two dimensional AFM component would lose its irreversibility for larger applied measure field.
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