SPONTANEOUS AND LASER EMISSION FROM Pb1−<i>x</i>Sn<i>x</i>Te DIODES PREPARED BY Sb DIFFUSION

Abstract

Impurity diffusion, using the donor impurity Sb, has been used to prepare high-quality Pb1−xSnxTe (x=0.13–0.20) light-emitting diodes. The emission of 8–14 μ spontaneous and laserlike radiation from these diodes is discussed in terms of the optical gain expected at these wavelengths.