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On-State and Switching Performance of High-Voltage 15 – 20 kV 4H-SiC DMOSFETs and IGBTs
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2008
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Switching PerformanceElectrical EngineeringSwitching FrequencyEngineeringSemiconductor DeviceHigh Voltage Engineering4H-sic DmosfetsNanoelectronicsHigh-voltage 15Current DensityBias Temperature InstabilityPower DevicePower Semiconductor DevicePower Electronic SystemsPower ElectronicsMicroelectronicsPower Electronic Devices
We compare the on-state and switching performance of high-voltage 4H-SiC n-channel DMOSFETs and p-channel IGBTs within a three-dimensional parameter space defined by blocking voltage, switching frequency, and current density. We determine the maximum current density each device can carry at a given switching frequency, such that the total power dissipation is 300 W/cm2. The IGBT current depends strongly on lifetime in the NPT buffer layer, and only weakly on lifetime in the drift layer. The MOSFET current is essentially independent of frequency.