Publication | Closed Access
Lateral composition modulation in InGaAsP strained layers and quantum wells grown on (100) InP by gas source molecular beam epitaxy
50
Citations
19
References
1996
Year
Materials ScienceEngineeringPhysicsApplied PhysicsQuantum WellsLateral Composition ModulationMolecular Beam EpitaxyEpitaxial GrowthCompound Semiconductor
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