An Extended X-Ray-Absorption Fine-Structure Study of Bond Lengths in GaAs_1-xP_x

Abstract

Extended X-ray-absorption fine-structure measurements were performed on GaAs 1- x P x , a typical III-V-V type semiconductor alloy, with the composition x as a parameter. The results reveal that the Ga-As and Ga-P nearest-neighbor bond lengths differ, showing a tendency to retain their respective bond lengths in the binary compounds. This feature is similar to that found earlier in Ga 1- x In x As, a III-III-V type alloy.