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Conspicuous Voltage Shift of D-E Hysteresis Loop and Asymmetric Depolarization in Pb-Based Ferroelectric Thin Films
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Citations
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References
1999
Year
EngineeringMultiferroicsFerroelectric ApplicationNanoelectronicsD-e Hysteresis LoopThin Film ProcessingMaterials ScienceElectrical EngineeringPolycrystalline PbPhysicsConspicuous Voltage ShiftOxide ElectronicsSemiconductor MaterialAsymmetric DepolarizationPyroelectricityApplied PhysicsCondensed Matter PhysicsSpontaneous PolarizationThin Films
Polycrystalline Pb(Zr,Ti)O 3 (PZT) thin films fabricated by a chemical solution deposition (CSD) process exhibited a conspicuous initial voltage shift in the D - E hysteresis loop toward the negative-bias field. It was concluded that the origin of the voltage shift was an internal bias field due to asymmetric space-charge distribution induced by the natural alignment of spontaneous polarization during the cooling process. The internal bias field also caused asymmetric depolarizaiton at the zero-bias field. In heteroepitaxial (Pb,La)TiO 3 thin films, we observed a conspicuous voltage shift toward the positive-bias field and asymmetric depolarization at the zero-bias field. They were eliminated by the application of a positive unipolar pulse train.
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