MOVPE-grown 1.5 µm distributed feedback lasers on corrugated InP substrates

Abstract

A single-step low-pressure metalorganic vapor phase epitaxy (MOVPE) was applied to the fabrication of 1.5 μm InGaAsP/InP distributed feedback laser diodes on corrugated InP substrates, accompanied by LPE for buried heterostructure formation. High probability of single longitudinal mode operation was obtained due to the uniformity of the active layer thickness. A typical threshold current was 35 mA with both facets cleaved. A maximum output power of up to 27 mW was also obtained under single longitudinal mode operation with anti-reflective/cleaved facet configuration. The laser diode had high spectral stability under high-frequency direct modulation of 1.4 GHz. Results of initial aging tests (APC of 5 mW at 25°C for longer than 3800 h) have shown no degradation in driving currents. It is found that low-pressure MOVPE is favorable for epitaxial growth on corrugated substrates.