Publication | Closed Access
Enhanced field emission of p-type 3C-SiC nanowires with B dopants and sharp corners
39
Citations
47
References
2014
Year
Materials ScienceSemiconductor TechnologyElectrical EngineeringEngineeringSharp CornersNanotechnologyCompound SemiconductorApplied PhysicsP-type 3C-sic NanowiresCarbideEnhanced Field EmissionOptoelectronicsLow Turn-on FieldB-doped SicSemiconductor DeviceSemiconductor Nanostructures
We report the enhanced field emission of B-doped SiC nanowires with a low turn-on field and enhanced high-temperature stability.
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