A study of carrier lifetime in silicon by laser-induced absorption: A perpendicular geometry measurement - Concepedia

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A study of carrier lifetime in silicon by laser-induced absorption: A perpendicular geometry measurement

31

Citations

25

References

1992

Year

V. Grivickas, Jan Linnros, A. Vigelis, J. Šečkus, Jens Aage Tellefsen

Solid-State Electronics

PhotonicsEngineeringPhysicsLaser-induced BreakdownApplied PhysicsLaser-induced AbsorptionSemiconductor Device FabricationCarrier LifetimePulsed Laser DepositionOptoelectronicsSilicon On InsulatorPerpendicular Geometry Measurement

References

	Year	Citations

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