Preparation of Oxide Glass Films by Reactive Sputtering

Abstract

A method of depositing oxide glass films on a substrate is presented. The method involves the sputtering of a metal or semiconductor electrode in an oxidizing atmosphere (so‐called reactive sputtering). The films obtained are of good quality, unstrained, and adhere well to the substrate. Films of considerable thickness can be deposited and the substrate need not be heated during the process. The preparation of lead tellurite glass films, silica and germania glass films, silicate glass films, and stannate glass films is described. Some data on the kinetics of film growth and on the physical properties of these materials are presented.