Schottky diode characteristics of electrodeposited Au∕n-Si(111) nanocontacts

Abstract

Au ∕ n - Si ( 111 ) contacts with interface areas in the range of 10−12cm2 have been fabricated at the solid/liquid interface by electrochemical Au nucleation onto n-Si(111):H substrates. The contacts show a Schottky diode behavior with current densities much higher than expected from thermionic emission theory. The applied sophisticated in situ measurement technique allows, in general, in situ studies of electronic properties at any (semi-) conducting nanostructure at solid/liquid interfaces under well-defined conditions.