Japanese Journal of Applied Physics · 2004 · 16 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsPhotonicsThin FilmsLight-emitting DiodesOxide SemiconductorsSemiconductor PhysicsThermal Properties Of SemiconductorsThin Film Optical PropertiesUltrafast OpticsDecay TimeDecay Time AnalysisLight-emitting DevicesPhotoluminescencePhotoluminescence SpectroscopyQuenching EffectsSemiconductor CharacterizationThermal Quenching
Temporal decay characteristics of highly (110)-oriented β-FeSi2 films were explored at 77 K and at room temperature. The 1.5 µm-band photoluminescence (PL) decayed as fast as that of the laser pulse, giving a characteristic decay time of sub-nanosecond, which is four orders faster than that of β-FeSi2 precipitates previously reported. In addition, the PL intensity of our β-FeSi2 films suffered a much weaker thermal quenching from 77 K to room temperature. These results indicated possible promising applications in light-emitting and high-speed response devices.