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Time-Resolved 1.5 µm-Band Photoluminescence of Highly Oriented β-FeSi<sub>2</sub>Films Prepared by Magnetron-Sputtering Deposition
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2004
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EngineeringMagnetron-sputtering DepositionTime-resolved 1.5Optoelectronic DevicesThin Film Process TechnologySemiconductor NanostructuresSemiconductorsIi-vi SemiconductorElectronic DevicesPl IntensityCompound SemiconductorThin Film ProcessingMaterials ScienceTemporal Decay CharacteristicsSemiconductor Technologyβ-Fesi2 FilmsPhotoluminescencePhysicsOxide ElectronicsOptoelectronic MaterialsµM-band PhotoluminescenceApplied PhysicsThin FilmsOptoelectronics
Temporal decay characteristics of highly (110)-oriented β-FeSi2 films were explored at 77 K and at room temperature. The 1.5 µm-band photoluminescence (PL) decayed as fast as that of the laser pulse, giving a characteristic decay time of sub-nanosecond, which is four orders faster than that of β-FeSi2 precipitates previously reported. In addition, the PL intensity of our β-FeSi2 films suffered a much weaker thermal quenching from 77 K to room temperature. These results indicated possible promising applications in light-emitting and high-speed response devices.