Interband transitions in a spherical quantum layer in the presence of an electric field: Spherical rotator model

Abstract

The interband transitions in a spherical GaAs quantum layer in the presence of an arbitrarily directed electric field are studied theoretically within the framework of the rigid spherical rotator model. The problem is solved under the assumption that the external field is a perturbation. Within the framework of the dipole approximation an expression for the interband absorption coefficient is obtained, and the absorption threshold frequency is determined. The corresponding selection rules are derived. A comparison with the case of quantum transitions in a spherical quantum layer in the presence of a radial electric field is performed.