GaAs/AlAs double-barrier resonant tunneling structure on Si with large peak to valley ratio at room temperature

Abstract

We have successfully grown GaAs/AlAs double-barrier resonant tunneling structures on Si substrates by molecular beam epitaxy. At room temperature, a high peak to valley current ratio of 2.9 was observed. At 77 K, the peak to valley current ratio increased to 12.5. We attribute the excellent results to the smooth interfaces and low defect concentrations in GaAs on Si. Only a small deviation in current-voltage characteristics over the wafer was observed indicating a good uniformity of high crystalline quality.