Valence subband structure of 〈011〉-oriented quantum wells

Abstract

We present semianalytical calculations of the valence subband structure for 〈011〉-oriented quantum wells of cubic semiconductors. Working in the Kohn–Luttinger formalism [Phys. Rev. 97, 869 (1955)], we present analytic expressions for the effective mass tensor and show the full subband dispersion for GaAs and InAs. In addition to the usual extremum at k∥=0, 〈011〉-oriented wells support saddle point spectra. In this case, the effective mass changes sign as a function of in-plane crystallographic direction.