High-Efficiency Class-F GaN HEMT Amplifier With Simple Parasitic-Compensation Circuit

Abstract

This letter presents a highly efficient class-F power amplifier (PA) using a GaN high electron mobility transistor, which is designed at WCDMA band of 2.14 GHz. The simple and effective compensation circuit consisting of a series capacitor and a shunt inductor is used to compensate for the internal parasitic components of the packaged transistor. Also, the composite right/left-handed transmission lines are used as the harmonic tuner of the class-F PA. From the measured results for a continuous wave, the drain efficiency and power-added efficiency of 75.4% and 70.9% with a gain of 12.2 dB are achieved at an output power of 40.2 dBm.