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Effects of O<sub>2</sub> Gas Pressure in Heat Treatment on Surface Morphology and Electric Properties of Ferroelectric Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> Thin Films with c-Axis Orientation
42
Citations
12
References
1995
Year
Thin Film PhysicsMagnetic PropertiesEngineeringThin Film Process TechnologyMultiferroicsFerroelectric ApplicationHigh PressureSurface MorphologyHeat TreatmentThin Film ProcessingMaterials ScienceMaterials EngineeringElectric PropertiesPyroelectricityFerroelasticsSurface ScienceApplied PhysicsFerroelectric MaterialsThin FilmsFunctional Materials
Fabrication of ferroelectric Bi 4 Ti 3 O 12 thin films was carried out by spin-coating pyrolysis of Bi and Ti naphthenates and successive heat treatment in O 2 gas at various pressures. Heat treatment in O 2 gas at high pressure was effective for the fabrication of c -axis oriented Bi 4 Ti 3 O 12 thin films with a smooth surface and improvement of their electric properties. The thin film heat-treated at the O 2 gas pressure of 4.0×10 5 Pa was a single phase of Bi 4 Ti 3 O 12 completely oriented along the c -axis with good ferroelectric properties at room temperature: coercive field of 23 kV/cm, remanent polarization of 1.9 µ C/cm 2 , dielectric constant of 45, loss of 0.01 and leakage current density on the order of 10 -9 A/cm 2 . The remanent polarization of the thin film was kept constant up to the polarization reversal at 1×10 7 cycles.
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