Calculations of two dimensional electron gas distributions in AlGaN/GaN material system

Abstract

This paper presents calculating results of the two-dimensional electron gas (2DEG) distributions in AlGaN/GaN material system by solving the Schrödinger and Poisson equations self-consistently. Due to high 2DEG density in the AlGaN/GaN heterojunction interface, the exchange correlation potential should be considered among the potential energy item of Schrödinger equation. Analysis of the exchange correlation potential is given. The dependencies of the conduction band edge, 2DEG density on the Al mole fraction are presented. The polarization fields have strong influence on 2DEG density in the AlGaN/GaN heterojunction, so the dependency of the conduction band edge on the polarization is also given.