Solid-immersion photoluminescence microscopy of carrier diffusion and drift in facet-growth GaAs quantum wells

Abstract

Carrier diffusion and drift in facet-growth quantum wells (QWs) on mesa-patterned substrates by molecular beam epitaxy was studied by high-resolution microscopic photoluminescence spectroscopy and imaging using a solid immersion lens at low temperatures. Under point excitation, excitation-position-dependent anisotropic carrier migration was observed, which was explained by carrier diffusion and drift due to spatial change in the quantization energy in QWs.