Metal-organic frameworks as promising candidates for future ultralow-k dielectrics

Abstract

A class of Zn4O(CO2)6-based metal-organic frameworks (MOFs) is theoretically analyzed with respect to suitability as an interlayer dielectric material for applications in semiconducting devices. The static dielectric constant is calculated using the Clausius–Mossotti approach. For 3 of about 30 of the considered MOFs excellent combinations of ultralow dielectric constant, elastic bulk modulus, and gap energy are found favoring these materials as outstanding candidates for future ultralow-k dielectric materials.