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Design and Characterization of a Room Temperature All-Solid-State Electronic Source Tunable From 2.48 to 2.75 THz
106
Citations
24
References
2012
Year
Materials ScienceThz PhotonicsElectrical EngineeringRoom TemperatureThin Gaas Membrane2.48-2.75 Thz BandPhysicsEngineeringHigh-frequency DeviceApplied PhysicsTerahertz TechniqueInstrumentationMicroelectronicsTerahertz PhotonicsOptoelectronics
We report on the design, fabrication and test of an all-solid-state, frequency agile source that produces over across the 2.48-2.75 THz band at room temperature. This frequency-multiplied source is driven by a W-band synthesizer followed by a power amplifier that delivers 350-450 mW (25.5-26.5 dBm) and a cascade of three balanced frequency triplers. The first stage tripler is based on four power-combined six-anode GaAs Schottky diode devices, and the second stage tripler is based on two four-anode GaAs devices. The output tripler uses a single unbiased device featuring two anodes monolithically integrated onto a thin GaAs membrane. The source delivers a record at 2.58 THz at room temperature. This frequency multiplied source is analyzed with a Fourier transform spectrometer (FTS) and the unwanted harmonics are found to be at least 29 dB below the desired signal. This source, when used as the local oscillator for a hot-electron bolometer mixer, will enable heterodyne instruments for future space missions to map the cosmologically-important 2.675 THz HD molecular line.
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