IT CCD Imaging Sensor With Variable Speed Electronic Shutter

Kikue Ishikawa, Masaharu Hamasaki, Tomoyuki Suzuki, Hideo Kanbe, Y. Kagawa, Katsuroh Miyata, K. Yonemoto

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1989 · 14 citations · 0 references

Concepts

Abstract

The Hole-Accumulation Diode-Sensor (HAD-Sensor) structure, which allows to implement the variable speed electronic shutter in the Interline Transfer (IT) CCD imaging sensor, has been developed. Based on this technology, a 2/3 inch imaging sensor with 420,000 picture elements for consumer, industrial, and professional use was manufactured. The theoretical lower limit of variable shutter speed is about 1/1,000,000 sec. in the case of exposure within the vertical blanking interval (i.e. below 1/787 sec.). This HAD-Sensor achieves the following five major results, which are essential to yield the variable speed electronic shutter in an IT CCD: ( 1 ) complete draining of unwanted stored charges into n-type substrate, ( 2 ) negligibly small lag, ( 3 ) dark current reduced to 1/10 of the conventional level, ( 4 ) smear reduced to 1/5 of the conventional level, and ( 5 ) increased blue sensitivity.