IEEE Transactions on Nuclear Science · 1988 · 13 citations · 5 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ModelingDevice ReliabilityCircuit Response AnalysisCylindrical CoordinatesExperimental Study DesignSilicon Germanium Bipolar TransistorSingle Event EffectsSingle Event Upset Modeling
An extensive analytical and experimental study of SEU in an advanced silicon bipolar process was made. The modeling used process and device parameters to model the SEU charge, collection, and circuit response derived from a special version of PISCES in cylindrical coordinates and SPICE, respectively. Data are reported for test cells of various sizes.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Physical SEU model for circuit simulations
A. Peczalski, J. Bergman, D.F. Berndt et al. · IEEE Transactions on Nuclear Science · 1988 · 13 citations