Amorphous silicon and germanium films for uncooled microbolometers

Abstract

The possibility of using amorphous silicon and germanium films prepared by magnetron sputtering as components in uncooled microbolometers has been analyzed experimentally and results are presented. Amorphous silicon and germanium films having activation energies of 0.135 and 0.2 eV, and resistivities of 50 and 0.4 kΩ·cm, respectively, were fabricated.