Growth Enhancement of Radish Sprouts Induced by Low Pressure O₂Radio Frequency Discharge Plasma Irradiation

Abstract

We studied growth enhancement of radish sprouts ( Raphanus sativus L.) induced by low pressure O 2 radio frequency (RF) discharge plasma irradiation. The average length of radish sprouts cultivated for 7 days after O 2 plasma irradiation is 30–60% greater than that without irradiation. O 2 plasma irradiation does not affect seed germination. The experimental results reveal that oxygen related radicals strongly enhance growth, whereas ions and photons do not.