Enhancement of charge and energy storage in sol-gel derived pure and La-modified PbZrO3 thin films

Abstract

Antiferroelectric lanthanum-modified PbZrO3 thin films with La contents between 0 and 6at.% have been deposited on Pt(111)∕Ti∕SiO2∕Si substrate by sol-gel route. On the extent of La-modification, maximum polarization (Pmax) and recoverable energy density (W) have been enhanced followed by their subsequent reduction. A maximum Pmax (∼0.54C∕m2 at ∼60MV∕m) as well as a maximum W (∼14.9J∕cc at ∼60MV∕m) have been achieved on 5% La modification. Both Pmax and W have been found to be strongly dependent on La-induced crystallographic orientations.