Processing and characterization of sol-gel derived very thin film ferroelectric capacitors

Abstract

The processing and characterization of very thin (425-1250Å) film lead zirconate-titanate (PZT) ferroelectric capacitors, made by the sol-gel method, are described. Capacitors with a PZT film thickness of approximately 500Å have been found to switch and saturate at 3 volts. Such capacitors are being integrated with GaAs JFET technology for the fabrication of GaAs nonvolatile memories where a switching voltage of 3 volts is employed. The effects of various processing parameters on the performance of the PZT capacitors are presented.