High-Dose Implantation of MeV Carbon Ion into Silicon

Abstract

The formation of SiC in silicon wafer by 1.5 MeV C + implantation to doses of 1.5×10 18 ions/cm 2 followed by annealing is demonstrated using infrared absorption spectra and Rutherford backscattering (RBS). From the results of He + backscattering under the channeling condition, the surface layer of Si is observed to remain crystalline even before annealing.