Control of orientation of CdTe grown on clean GaAs and the reconstruction of the precursor surfaces

Abstract

The orientation of CdTe grown epitaxially onto clean (100) GaAs by molecular beam epitaxy can be predetermined by the GaAs precursor surface reconstruction that is present where the CdTe growth is initiated. A Ga-stabilized GaAs starting surface yields CdTe (111) and an As-stabilized GaAs surface yields CdTe (100).