Deposition and Properties of Reactively Sputtered Ruthenium Dioxide Thin Films as an Electrode for Ferroelectric Capacitors

Abstract

Ruthenium dioxide (RuO 2 ) films are studied for use as a bottom electrode of the (Ba, Sr)TiO 3 thin-film capacitor. RuO 2 films have been deposited by reactive DC magnetron sputtering of ruthenium at a relatively low sputtering power. Stoichiometric RuO 2 films are obtained at oxygen partial pressures as low as 0.6 mTorr. The properties of the films have been investigated using techniques such as Rutherford backscattering spectrometry, Auger electron spectrometry, X-ray diffraction, and scanning electron microscopy. The oxygen composition in as-deposited RuO x films increases from 2.0 to 2.4 with the increase of initial O 2 partial pressure from 1.2 to 5.6 mTorr at a sputtering power of 200 W. The films deposited under low oxygen partial pressures followed by annealing show preferential crystal growth in the [110] direction, whereas those deposited in high oxygen partial pressures show growth in the [101] direction. A resistivity of 65 µΩ·cm is obtained after annealing at 800°C. Even after high-temperature deposition and subsequent annealing processes, clear interfaces between (Ba, Sr)TiO 3 and RuO 2 films are obtained.