Modelling the resistive state in a transition edge sensor

Abstract

We have developed a model for the resistive transition in a transition edge sensor (TES) based on the model of a resistively and capacitively shunted junction, taking into account phase-slips of a superconducting system across the barriers of the tilted washing board potential. We obtained analytical expressions for the resistance of the TES, R(T, I), and its partial logarithmic derivatives αI and βI as functions of temperature and current. We have shown that all the major parameters describing the resistive state of the TES are determined by the dependence on temperature of the Josephson critical current, rather than by intrinsic properties of the S-N transition. The complex impedance of a pristine TES exhibits two-pole behaviour due to its own intrinsic reactance.