Publication | Closed Access

An empirical potential for the calculation of the atomic structure of extended defects in wurtzite GaN

Materials ScienceEmpirical PotentialWide-bandgap SemiconductorEngineeringPhysicsExtended DefectsApplied PhysicsAluminum Gallium NitrideGan Power DeviceDefect FormationWurtzite GanCategoryiii-v Semiconductor