Electronics Letters · 1987 · 10 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesHigh-frequency Semiconductor DevicesIon ImplantationLaser DiodesLaser OpticsLaser PhysicsSemiconductor LasersDifferential Quantum EfficiencyDiode Laser Threshold CurrentFacet CoatingsHigh-power Laser DiodesHigh-power LasersHigh-power Semiconductor LasersPower OutputSemiconductor Laser Diodes
We demonstrate, for the first time, laser diodes with anetched facet fabricated by chemically assisted ion beametching, producing 1–7 W pulsed and 470mW CW output power from one facet. The devices were coated and bonded junction-side-up and tested at room temperature. The single 40 μm stripe, 300 μm-long devices exhibit 94 mA threshold current and differential quantum efficiencies of 80% pulsed (78% CW).
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Focused-ion-beam micromachined AlGaAs semiconductor laser mirrors
J. Puretz, Richard K. DeFreez, Richard A. Elliott et al. · Electronics Letters · 1986 · 43 citations