High-power etched-facet lasers

Abstract

We demonstrate, for the first time, laser diodes with anetched facet fabricated by chemically assisted ion beametching, producing 1–7 W pulsed and 470mW CW output power from one facet. The devices were coated and bonded junction-side-up and tested at room temperature. The single 40 μm stripe, 300 μm-long devices exhibit 94 mA threshold current and differential quantum efficiencies of 80% pulsed (78% CW).