Growth kinetics and crystallographic properties of polysilicon thin films formed by aluminium-induced crystallization

Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization

Oliver Nast, Stuart Wenham · Journal of Applied Physics · 2000 · 351 citations

Engineering, Crystal Growth Technology, Thin Film Process Technology +18

Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature

Oliver Nast, T. Puzzer, L. Koschier et al. · Applied Physics Letters · 1998 · 326 citations

Materials Science, Materials Engineering, Aluminum-induced Crystallization +15

Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon

Oliver Nast, Andreas Hartmann · Journal of Applied Physics · 2000 · 204 citations

Materials Science, Aluminum-induced Crystallization, Layer Exchange +15

Modelling the overlap of nucleation, growth and coarsening during precipitation

J.D. Robson · Acta Materialia · 2004 · 179 citations

Surface Runoff, Earth Science, Engineering +7

Coincidence lattice model for the structure and energy of grain boundaries

A. Brokman, R. W. Balluffi · Acta Metallurgica · 1981 · 136 citations

Quantum Lattice System, Grain Boundaries, Engineering +9