Laser annealing effect on carrier recombination time in CdSXSe_1–X-doped glasses

Abstract

The carrier recombination time of CdSxSe1–x-doped glasses has been studied in detail by using laser-induced-grating and pump–probe measurements. Decay curves have been found to show strong sharpening as a function of the laser-pulse exposure time. A slow decay of a few nanoseconds in the first stage is quenched during the irradiation, and finally a fast decay as short as 7 psec remains. Simple three-level rate equations, including the valence band, the conduction band, and the intermediate trap level, are proposed to explain the observation that this annealing effect may be parameterized by the conduction-to-trap-level decay time.