Air Stable n-type Top Gate Carbon Nanotube Filed Effect Transistors with Silicon Nitride Insulator Deposited by Thermal Chemical Vapor Deposition

Abstract

The air stable n-type carbon nanotube channel filed effect transistor (CNT-FET) with the top gate structure was successfully fabricated using the silicon nitride gate insulator deposited by the thermal chemical vapor deposition. The effects of the silicon nitride insulator on the electrical properties of the CNT-FET have been investigated. The p-type characteristics of the CNT-FET can be converted to the n-type characteristics in high yield of 90% only by depositing the silicon nitride insulator. The drain current is as high as few µA order. The n-type top gate CNT-FET stably operated even in ambient air.