Accelerated publication 23.5% efficient silicon solar cell

Abstract

Abstract The passivated emitter and rear locally diffused cell structure has been redesigned and has yielded independently confirmed one‐sun eficiencies of up to 23.5%, the highest ever for a silicon cell. A dotted front emitter contact design, PBr 3 liquid‐source phosphorus diffusions and 400‐μm thick 10‐cm diameter wafers have contributed to this improvement. Some of the new cells have demonstrated open‐circuit voltages of 709 mV with an ‘inverted’ pyramid surface structure, the highest ever for a 23%‐efficiency silicon cell. Further improvement is expected in the near future.