Reliable 1.5 μm buried heterostructure, separate confinement, multiple quantum well (BH-SC-MQW) lasers entirely grown by metalorganic vapour-phase epitaxy (MOVPE)

Abstract

We report the first reliable BH-SC-MQW semiconductor lasers in the GaInAsP quaternary system grown entirely by MOVPE. Threshold currents were as low as 10 mA with differential efficiencies of 0.18 mW/mA per facet at 20°C for 250 μm-long devices. A characteristic temperature of 49 K was measured for a 300 μm-long laser. Initial reliability data suggest these lasers should have lifetimes comparable to standard BH lasers.