Growth, characterization, and modeling of ternary InGaAs-GaAs quantum wells by selective-area metalorganic chemical vapor deposition - Concepedia

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Growth, characterization, and modeling of ternary InGaAs-GaAs quantum wells by selective-area metalorganic chemical vapor deposition

31

Citations

24

References

1995

Year

Andrew M. Jones, M.L. Osowski, R.M. Lammert, Jonathan A. Dantzig, J. J. Coleman

Journal of Electronic Materials

Electrical EngineeringEngineeringApplied PhysicsMolecular Beam EpitaxyOptoelectronicsCompound Semiconductor

References

	Year	Citations

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