Powerful mid-infrared light emitting diodes forpollution monitoring

Abstract

Powerful mid-infrared (1.7–4.8 µm) light emitting diodes were manufactured by liquid phase epitaxy using GaSb-InAs compounds. Their output optical power was enhanced up to 2–3.5 mW using symmetrical double heterostructures with large band offsets. These diodes can be used as narrow bandwidth emitters for cost-reduced setups for atmospheric pollution monitoring.