Optical gain in Si/SiO2 lattice: Experimental evidence with nanosecond pulses

Abstract

Experimental evidence of population inversion and amplified spontaneous emission was found for Si nanocrystallites embedded in SiO2 surrounding under pumping with 5 ns light pulses at 380, 400, and 500 nm. As an important property, our experiments show a short lifetime of the population inversion allowing a generation of short (a few nanosecond) amplified light pulses in the Si/SiO2 lattice. The estimate for optical gain in the present samples is 6 cm−1 at 720 nm.