Calculations on the properties of helium in silicon

Abstract

Abstract The electronic properties, lattice location, and diffusion coefficient of helium are investigated in silicon by extended Hückel theory calculations. The electrical properties are unchanged, the helium sits in the tetrahedral interstitial position, and the calculated diffusion coefficient is (1.28 ± 0.11) × 10 −3 cm 2 s −1 exp (− 1.8 eV/ kT ).