Evidence of trapping in device-quality liquid-phase-epitaxial In _{1− <i>x</i>} Ga _<i>x</i> As _<i>y</i> P _{1− <i>y</i>}

Abstract

Traps have been identified in epitaxial n- and p-type In1−xGaxAsyP1−y for the first time. The activation energy, capture cross-section and density of several electron traps in the quaternary composition range from InP to In0.53Ga0.47As have been determined. An electron trap similar in some characteristics to the 0.83 eV electron trap present dominantly in bulk and v.p.e. GaAs was observed in an n-type In0.71Ga0.29As0.45P0.55(Eg=0.95 eV) layer. Hole traps were not observed.