The impurity photovoltaic (IPV) effect in wide‐bandgap semiconductors: an opportunity for very‐high‐efficiency solar cells?

Abstract

Abstract Following recent progress in the study of limiting efficiencies of photovoltaic devices with multiple energy levels, we suggest using the impurity photovoltaic (IPV) effect in wide‐bandgap semiconductors as a means to achieve very‐high‐efficiency solar cells. We discuss the requirements for a high‐efficiency IPV device and review some of the material systems that could be used. As a case study, we investigate theoretically β‐SiC IPV solar cells with a model based on a modified Shockley–Read–Hall theory. The high‐efficiency potential is confirmed and the important issues for implementation are presented and discussed. Copyright © 2002 John Wiley &; Sons, Ltd.