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<title>Structure, thermal stability, and reflectivity of Sc/Si and Sc/W/Si/W multilayer x-ray mirrors</title>
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2001
Year
X-ray SpectroscopyEngineeringThin Film Process TechnologyX-ray MirrorsSilicon On InsulatorSi LayersThermal StabilityX-ray ScatteringMaterials EngineeringMaterials ScienceElectrical EngineeringSemiconductor MaterialSemiconductor Device FabricationSynchrotron RadiationMicroelectronicsCrystallographySc/si CoatingsDepth-graded Multilayer CoatingSurface ScienceApplied PhysicsX-ray Diffraction
Processes going on at elevated temperatures between Sc and Si layers in Sc/Si coatings are studied by X-ray scattering and cross-sectional transmission electron microscopy. It is shown that the W layers of 0.5-0.8 nm placed at Sc-Si interfaces form effective barriers preventing the penetration of Si into Sc. The effects of Si-Sc diffusion and W-barriers on the reflectivity of coatings are calculated in good agreement with experimental results. Presented measurements show that the Sc/W/Si/W multilayers with the period of 20.5 nm fabricated by dc-magnetron sputtering possess thermal stability up to 250 C and the normal incidence reflectivity of 24% at wavelengths about 40 nm.