Concepedia

High speed, monolithically integrated <i>pin</i> -HEMTphotoreceiver fabricated on InPwith 18 GHz bandwidth

B.-U.H. Klepser, J. Spicher, Mattias Beck, C. Bergamaschi, W. Patrick, W. Bächtold

Electronics Letters · 1995 · 15 citations · 3 references

Concepts

EngineeringElectrical EngineeringMicrowave EngineeringOptoelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsPhotodetectorsPhotonic Integrated CircuitsRadio-frequency Integrated CircuitsCapacitanceHigh-speed PhotodetectionInput ImpedanceInput Impedance MatchingIntegrated PhotodetectorsPhotodetectionPhotodiode CircuitsPhotodiodes

Abstract

An integrated photoreceiver using a pin photodiode and GaInAs/AlInAs HEMTs has been fabricated and characterised. The circuitry consists of a high input impedance front-end followed by an equalising second stage to compensate for the input capacitance. A bandwidth of 18 GHz was achieved which is, to the authors' knowledge, the highest reported bandwidth for an integrated photoreceiver on InP.

References

3

A 10 Gb/s high sensitivity, monolithically integrated p-i-n-HEMT optical receiver

Y. Akatsu, Y. Miyagawa, Y. Miyamoto et al. · IEEE Photonics Technology Letters · 1993 · 41 citations

Engineering, Communication, Electrical Engineering +17

InP-based HEMTs for microwave and millimeter-wave applications

P.M. Smith · 2002 · 31 citations

Engineering, Electrical Engineering, Materials Science +17

Ultralow noise 10 Gb/s p-i-n-HEMT optical receiver

M.S. Park, R.A. Minasian · IEEE Photonics Technology Letters · 1993 · 14 citations

Engineering, Electrical Engineering, Microelectronics +16