Ferromagnetism in Cu-doped ZnO films: Role of charge carriers

Abstract

We report the observation of room temperature ferromagnetism in Cu-doped (5%) ZnO films grown on c-plane sapphire substrates. Films were prepared by pulsed laser deposition technique and were thoroughly characterized using several state-of-the-art characterization techniques. Hall measurements showed that the films are of n-type with a carrier concentration of 3×1017cm−3. Magnetization measurements showed that the films exhibit room temperature ferromagnetism with a saturation magnetization of ∼1.45μB∕Cu atom. When additional carriers were introduced in the films, ferromagnetism was completely vanished. Our results show that the p-type nature of the film is not essential for realizing ferromagnetic characteristics; however, the concentration of n-type carriers should not exceed a critical value.