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Anisotropic Segregation in InSb
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1961
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EngineeringPhysicsAnisotropic SegregationCrystal Growth TechnologyCrystal MaterialApplied PhysicsCondensed Matter PhysicsAtomic PhysicsTracer ElementCrystal FormationCrystallographyRadioactive SeAnisotropic Material
The anisotropic segregation of Se in has been studied using radioactive Se as a tracer element. A core consisting of a high concentration of Se has been found in the center of crystals pulled in the [111] direction. This phenomenon is thought to result from an extremely rapid lateral growth occurring on the (111) facet. Well‐defined striations were also observed. Crystals grown from seeds oriented in directions other than the [111] are found to have high concentrations of Se in the (111) facets near the edge of the crystal, thus removal of the edges leaves the major portion of the crystal relatively homogeneous and with lower impurity content.