Charged wall formation mechanism in ion-implanted contiguous disk bubble devices

Abstract

Charged wall formation mechanism at the contiguous disk bubble propagation pattern edges are investigated by using various kinds of garnet epitaxial layers with in-plane magnetization. Charged walls were observed only in in-plane magnetization layer with stress-induced negative uniaxial anistropy energy. A model is proposed to explain the charged wall formation mechanism in ion-implanted contiguous disk drive layer. It is suggested that, in order for charged walls to be held at the pattern edge, compressive lattice stress relief at the pattern edge is necessary, when the magnetostriction constant λ111 is negative.