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Acceptor bound exciton absorption and luminescence in germanium
10
Citations
18
References
1981
Year
SemiconductorsElectronic Excited StateExcited State PropertyLocalized Excited StateEngineeringPhotoluminescencePhysicsNatural SciencesApplied PhysicsQuantum MaterialsCondensed Matter PhysicsAtomic PhysicsLuminescence PropertyQuantum ChemistryOther SemiconductorsAcceptors GalliumOptoelectronicsExciton Spectra
Absorption and luminescence is reported, associated with the creation and decay of excitons bound to the acceptors gallium, indium and thallium in germanium. The principal bound exciton lines exhibit a triplet structure, which is a common feature of acceptor bound exciton spectra in other semiconductors. Particular attention is directed to prominent excited state structure which has not been clearly resolved in other materials.
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